Téléchargez le livre : The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices

The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices

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Éditeur :

Springer


Collection :

Springer Theses

Paru le : 2016-03-24

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Description
This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFET. With  adopting of the Implantation After Germanide (IAG) technique, P and Sb co-implantation technique and Multiple Implantation and Multiple Annealing (MIMA) technique, the electron Schottky barrier height of NiGe/Ge contact is modulated to 0.1eV, the thermal stability of NiGe is improved to 600? and the contact resistivity of metal/n-Ge contact is drastically reduced to 3.8×10-7O•cm2, respectively. Besides, a reduced  source/drain parasitic resistance is demonstrated in the  fabricated Ge nMOSFET. Readers will find useful information about the source/drain engineering technique for high-performance CMOS devices at future technology node.
Pages
59 pages
Collection
Springer Theses
Parution
2016-03-24
Marque
Springer
EAN papier
9783662496817
EAN EPUB
9783662496831
Informations sur l'ebook
Nombre pages copiables
0
Nombre pages imprimables
5
Taille du fichier
1362 Ko
Prix
52,74 €

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