High Dielectric Constant Materials

VLSI MOSFET Applications de

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Éditeur :

Springer


Collection :

Springer Series in Advanced Microelectronics

Paru le : 2005-11-02

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Description
Issues relating to the high-K gate dielectric are among the greatest challenges for the evolving International Technology Roadmap for Semiconductors (ITRS). More than just an historical overview, this book will assess previous and present approaches related to scaling the gate dielectric and their impact, along with the creative directions and forthcoming challenges that will define the future of gate dielectric scaling technology. Topics include: an extensive review of Moore's Law, the classical regime for SiO2 gate dielectrics; the transition to silicon oxynitride gate dielectrics; the transition to high-K gate dielectrics (including the drive towards equivalent oxide thickness in the single-digit nanometer regime); and future directions and issues for ultimate technology generation scaling. The vision, wisdom, and experience of the team of authors will make this book a timely, relevant, and interesting, resource focusing on fundamentals of the 45 nm Technology Generation and beyond.
Pages
710 pages
Collection
Springer Series in Advanced Microelectronics
Parution
2005-11-02
Marque
Springer
EAN papier
9783540210818
EAN PDF
9783540264620

Informations sur l'ebook
Nombre pages copiables
7
Nombre pages imprimables
71
Taille du fichier
11110 Ko
Prix
304,89 €