Téléchargez le livre : Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion

Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion

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Éditeur :

Springer


Collection :

Integrated Circuits and Systems

Paru le : 2018-05-12

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Description

This book demonstrates to readers why Gallium Nitride (GaN) transistors have a superior performance as compared to the already mature Silicon technology. The new GaN-based transistors here described enable both high frequency and high efficiency power conversion, leading to smaller and more efficient power systems. Coverage includes i) GaN substrates and device physics; ii) innovative GaN -transistors structure (lateral and vertical); iii) reliability and robustness of GaN-power transistors; iv) impact of parasitic on GaN based power conversion, v) new power converter architectures and vi) GaN in switched mode power conversion.



Provides single-source reference to Gallium Nitride (GaN)-based technologies, from the material level to circuit level, both for power conversions architectures and switched mode power amplifiers;
Demonstrates how GaN is a superior technology for switching devices, enabling both high frequency, high efficiency andlower cost power conversion;
Enables design of smaller, cheaper and more efficient power supplies.
Pages
232 pages
Collection
Integrated Circuits and Systems
Parution
2018-05-12
Marque
Springer
EAN papier
9783319779935
EAN PDF
9783319779942
Informations sur l'ebook
Nombre pages copiables
2
Nombre pages imprimables
23
Taille du fichier
12995 Ko
Prix
105,49 €

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